SQJ858EP www.vishay.com vishay siliconix s12-2275-rev. b, 24-sep-12 1 document number: 67714 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 automotive n-channel 40 v (d-s) 175 c mosfet features ?trenchfet ? power mosfet ?100 % r g and uis tested ? aec-q101 qualified ? material categorization: ? for definitions of compliance please see www.vishay.com/doc?99912 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. when mounted on 1" squa re pcb (fr-4 material). c. see solder profile ( www.vishay.com/doc?73257 ). the powerpak so-8l. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fill et at the exposed copper tip cannot be guaranteed and is not r equired to ensure adequate bottom side solder interconnection. d. rework conditions: manual soldering with a soldering iron is not recommended for leadless components. product summary v ds (v) 40 r ds(on) ( ? ) at v gs = 10 v 0.006 r ds(on) ( ? ) at v gs = 4.5 v 0.009 i d (a) 75 configuration single 4 6.15 mm powerpak ? so-8l single 5.13 mm 3 2 1 g s s s d d g s n-channel mosfet ordering information package powerpak so-8l lead (pb)-free and halo gen-free SQJ858EP-t1-ge3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 40 v gate-source voltage v gs 20 continuous drain current t c = 25 c i d 75 a t c = 125 c 43 continuous source curr ent (diode conduction) i s 60 pulsed drain current a i dm 200 single pulse avalanche current l = 0.1 mh i as 40 single pulse avalanche energy e as 80 mj maximum power dissipation a t c = 25 c p d 68 w t c = 125 c 22 operating junction and storage temperature range t j , t stg - 55 to + 175 c soldering recommendations (peak temperature) c, d 260 thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount b r thja 68 c/w junction-to-case (drain) r thjc 2.2
SQJ858EP www.vishay.com vishay siliconix s12-2275-rev. b, 24-sep-12 2 document number: 67714 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design , not subject to production testing. c. independent of operating temperature. ? ? ? ? ? stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. ? specifications (t c = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0, i d = 250 a 40 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.5 2.0 2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = 40 v - - 1 a v gs = 0 v v ds = 40 v, t j = 125 c - - 50 v gs = 0 v v ds = 40 v, t j = 175 c - - 150 on-state drain current a i d(on) v gs = 10 v v ds ??? 5 v 30 - - a drain-source on-state resistance a r ds(on) v gs = 10 v i d = 11 a - 0.005 0.006 ? v gs = 4.5 v i d = 9 a - 0.007 0.009 v gs = 10 v i d = 11 a, t j = 125 c - - 0.015 v gs = 10 v i d = 11 a, t j = 175 c - - 0.019 forward transconductance b g fs v ds = 15 v, i d = 11 a - 49 - s dynamic b input capacitance c iss v gs = 0 v v ds = 20 v, f = 1 mhz - 2000 2500 pf output capacitance c oss - 500 625 reverse transfer capacitance c rss - 220 275 total gate charge c q g v gs = 10 v v ds = 20 v, i d = 16 a -3960 nc gate-source charge c q gs -6.7- gate-drain charge c q gd -8- gate resistance r g f = 1 mhz 0.40 0.83 1.30 ? turn-on delay time c t d(on) v dd = 20 v, r l = 20 ? i d ? 1 a, v gen = 10 v, r g = 6 ? -1827 ns rise time c t r -1015 turn-off delay time c t d(off) -3857 fall time c t f -1726 source-drain diode ratings and characteristics b pulsed current a i sm - - 200 a forward voltage v sd i f = 10 a, v gs = 0 - 0.76 1.1 v
SQJ858EP www.vishay.com vishay siliconix s12-2275-rev. b, 24-sep-12 3 document number: 67714 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transconductance capacitance transfer characteristics on-resistance vs. drain current gate charge 0 32 64 96 128 160 0 2 4 6 8 10 i d - drain current (a) v d s -drain-to- s ource voltage (v) v gs = 10 v thru 5 v v gs = 3 v v gs = 4 v 0 20 40 60 80 100 0 5 10 15 20 25 g f s -tran s conductance ( s ) i d - drain current (a) t c = 125 c t c = - 55 c t c = 25 c 0 500 1000 1500 2000 2500 3000 0 10 20 30 40 c - capacitance (pf) v d s -drain-to- s ource voltage (v) c i ss c o ss c r ss 0 24 48 72 96 120 0 2 4 6 8 10 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = - 55 c t c = 125 c t c = 25 c 0.000 0.005 0.010 0.015 0.020 0.025 0 10 20 30 40 50 r d s (on) -on-re s i s tance () i d -drain current (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 0 10 20 30 40 50 v gs - g ate-to- s ource voltage (v) q g - total g ate charge (nc) v d s = 20 v i d = 16 a
SQJ858EP www.vishay.com vishay siliconix s12-2275-rev. b, 24-sep-12 4 document number: 67714 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage source drain diod e forward voltage threshold voltage drain source breakdown vs . junction temperature 0.6 0.9 1.2 1.5 1.8 2.1 - 50 - 25 0 25 50 75 100 125 150 175 r d s (on) -on-re s i s tance (normalized) t j - junction temperature ( c) i d = 14 a v gs = 4.5 v v gs = 10 v 0.00 0.02 0.04 0.06 0.08 0.10 0246810 r d s (on) -on-re s i s tance () v gs - g ate-to- s ource voltage (v) t j = 150 c t j = 25 c 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - s ource current (a) v s d - s ource-to-drain voltage (v) t j = 25 c t j = 150 c -1.2 -0.8 -0.4 0.0 0.4 - 50 - 25 0 25 50 75 100 125 150 175 v gs (th) - variance (v) t j -temperature ( c) i d = 250 a i d = 5 ma 44 46 48 50 52 54 - 50 - 25 0 25 50 75 100 125 150 175 v d s -drain-to- s ource voltage (v) t j - junction temperature ( c) i d = 1 ma
SQJ858EP www.vishay.com vishay siliconix s12-2275-rev. b, 24-sep-12 5 document number: 67714 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) safe operating area normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 i d - drain current (a) v d s -drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecified limited by r d s (on) * 1 m s i dm limited t c = 25 c s ingle pul s e bvd ss limited 10 m s 100 s 1 s , 10 s , dc 100 m s 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 68 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
SQJ858EP www.vishay.com vishay siliconix s12-2275-rev. b, 24-sep-12 6 document number: 67714 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the two graphs ? - normalized transient thermal impedance junction-to-ambient (25 c) ? - normalized transient thermal im pedance junction-to-case (25 c) ? are given for general guidelines only to enable the user to get a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circ uit board - fr4, size 1" x 1" x 0. 062", double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? vishay siliconix maintains worldwide manufactu ring capability. products may be manufact ured at one of seve ral qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67714 . 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance
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